제조사부품번호

Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1

RS 제품 번호:: 220-7462
제조사 부품 번호:: IPW65R110CFDAFKSA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩20,322.80

재고있음

142 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 6	₩10,161.40	₩20,322.80
8 - 14	₩9,907.60	₩19,815.20
16 +	₩9,747.80	₩19,495.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7462
제조사 부품 번호:: IPW65R110CFDAFKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	99.6A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	277.8W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	118nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Standards/Approvals	No
	Width	5.21 mm
	Height	21.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 99.6A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 277.8W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 118nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Standards/Approvals No
	Width 5.21 mm
	Height 21.1mm
	Automotive Standard No

Datasheet - IPW65R110CFDAFKSA1

The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Increased safety margin due to higher breakdown voltage

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

Higher switching frequency and/or higher duty cycle possible

High quality and reliability

Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1

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