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Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1

RS 제품 번호:: 220-7452
제조사 부품 번호:: IPU95R2K0P7AKMA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 15 units)*

₩18,583.80

재고있음

4,440 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
15 - 15	₩1,238.92	₩18,593.20
30 - 30	₩1,208.84	₩18,123.20
45 +	₩1,190.04	₩17,841.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7452
제조사 부품 번호:: IPU95R2K0P7AKMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-251
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Power Dissipation Pd	37W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	2.41 mm
	Length	6.73mm
	Standards/Approvals	No
	Height	6.22mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-251
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Power Dissipation Pd 37W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 2.41 mm
	Length 6.73mm
	Standards/Approvals No
	Height 6.22mm
	Automotive Standard No

Datasheet - IPU95R2K0P7AKMA1

The Infineon IPU95R2K0P7 designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low-power SMPS market. It offer 50V more blocking voltage than its predecessor 900V Cool MOS C3, the 950V Cool MOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss

Best-in-class DPAK RDS(on) of 450 mΩ

Best-in-class VGS(the) of 3V and smallest VGS(the) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1

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