제조사부품번호

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

RS 제품 번호:: 220-7418
제조사 부품 번호:: IPDD60R080G7XTMA1
제조업체:: Infineon

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩9,982.80

일시적 품절

2025년 12월 29일 부터 1,700 개 단위 배송

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수량	한팩당	한팩당*
2 - 424	₩4,991.40	₩9,982.80
426 - 848	₩4,869.20	₩9,738.40
850 +	₩4,794.00	₩9,588.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7418
제조사 부품 번호:: IPDD60R080G7XTMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	83A
	Maximum Drain Source Voltage Vds	650V
	Package Type	HDSOP
	Series	C7 GOLD
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Power Dissipation Pd	174W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.8V
	Standards/Approvals	No
	Width	2.35 mm
	Height	21.11mm
	Length	6.6mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 83A
	Maximum Drain Source Voltage Vds 650V
	Package Type HDSOP
	Series C7 GOLD
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Power Dissipation Pd 174W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.8V
	Standards/Approvals No
	Width 2.35 mm
	Height 21.11mm
	Length 6.6mm
	Automotive Standard No

Datasheet - IPDD60R080G7XTMA1

The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg

Innovative top-side cooling concept

Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance

TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free

Enabling highest energy efficiency

Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits

Reduced parasitic source inductance improves e efficiency and ease-of-use

Enables higher power density solutions

Exceeding the highest quality standards

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

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