Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

RS 제품 번호:: 219-5991
제조사 부품 번호:: IPA95R1K2P7XKSA1
제조업체:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

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Subtotal (1 pack of 10 units)*

₩17,320.00

일시적 품절

2026년 10월 05일 부터 40 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩1,732.00	₩17,320.00
20 - 90	₩1,700.00	₩17,000.00
100 - 240	₩1,668.00	₩16,680.00
250 - 490	₩1,640.00	₩16,400.00
500 +	₩1,610.00	₩16,100.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-5991
제조사 부품 번호:: IPA95R1K2P7XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	950V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	27W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 950V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 27W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA95R1K2P7XKSA1

Infineon CoolMOS P7 Series MOSFET, 950V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - IPA95R1K2P7XKSA1

This MOSFET is a high-voltage enhancement N‑channel transistor intended for power switching applications where sustained thermal and electrical performance is required. It operates across a wide ambient temperature range and is supplied in a through-hole TO‑220 package suited to mounted installations, delivering a balance of voltage handling, current capability and gate‑drive tolerance for use in power conversion and switching circuits.

Features and Benefits:

• 950 V rating enables high‑voltage switching applications
• 6 A continuous drain current supports moderate power loads
• 120 mΩ Rds(on) delivers low conduction losses during switching
• 27 W power dissipation allows sustained thermal loading
• 0.9 V forward voltage minimises Vf‑related conduction drop
• 30 V gate‑source rating permits common gate‑drive voltages

Applications

• Suitable for high‑voltage power supplies and converters
• Ideal for offline switch‑mode power supply primary side
• Used for industrial power switching and motor drivers
• Can be used for HV snubber and clamping circuits
• Used with power assemblies requiring TO‑220 mounting

What ambient temperature range can it tolerate?

It is specified to function between −55 °C and +150 °C.

How many pins and what mounting approach does it use?

It has three pins and is designed for through‑hole mounting in a TO‑220 package.

What channel mode and type does it employ?

It is an enhancement‑mode N‑channel device.

What is the maximum drain‑source voltage and its implication?

The maximum drain‑source voltage is 950 V, permitting use in high‑voltage circuits.

What electrical limits govern gate input?

The gate‑source voltage must not exceed 30 V.