Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1
- RS 제품 번호:
- 219-5991
- 제조사 부품 번호:
- IPA95R1K2P7XKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩14,833.20
재고있음
- 140 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,483.32 | ₩14,833.20 |
| 20 - 90 | ₩1,457.00 | ₩14,570.00 |
| 100 - 240 | ₩1,428.80 | ₩14,288.00 |
| 250 - 490 | ₩1,406.24 | ₩14,062.40 |
| 500 + | ₩1,379.92 | ₩13,799.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 219-5991
- 제조사 부품 번호:
- IPA95R1K2P7XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
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