N-Channel MOSFET, 40 A, 650 V, 5-Pin PowerFLAT 8 x 8 HV STMicroelectronics SCTL90N65G2V

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency

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