The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C) Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances
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