제조사부품번호

Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R280P6FKSA1

RS 제품 번호:: 218-3089
제조사 부품 번호:: IPW60R280P6FKSA1
제조업체:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R280P6FKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩22,447.20

일시적 품절

2026년 10월 27일 부터 배송

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수량	한팩당	한팩당*
5 - 5	₩4,489.44	₩22,447.20
10 - 10	₩4,376.64	₩21,883.20
15 +	₩4,312.72	₩21,563.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 218-3089
제조사 부품 번호:: IPW60R280P6FKSA1
제조업체:: Infineon

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13.8A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P6
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	25.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	104W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	5.21 mm
	Height	21.1mm
	Length	16.13mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13.8A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P6
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 25.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 104W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 5.21 mm
	Height 21.1mm
	Length 16.13mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R280P6FKSA1

The Infineon 600V CoolMOS™ P6 series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It is used in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Increased MOSFET dv/dt ruggedness

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R280P6FKSA1

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