제조사부품번호

Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R210CFD7XKSA1

RS 제품 번호:: 217-2561
제조사 부품 번호:: IPP60R210CFD7XKSA1
제조업체:: Infineon

Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R210CFD7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩17,991.60

마지막 RS 재고

최종적인 355 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 10	₩3,598.32	₩17,991.60
15 - 20	₩3,508.08	₩17,540.40
25 +	₩3,455.44	₩17,277.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2561
제조사 부품 번호:: IPP60R210CFD7XKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	CoolMOS 7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	210mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	23nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	64W
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Height	29.95mm
	Width	4.57 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series CoolMOS 7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 210mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 23nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 64W
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Height 29.95mm
	Width 4.57 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPP60R210CFD7XKSA1

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.

Ultra-fast body diode

Low gate charge

Best-in-class reverse recovery charge(Qrr)

Improved MOSFET reverse diode dv/dt and diF/dtruggedness

Lowest FOMRDS(on)*Qg and RDS(on)*Eoss

Best-in-class RDS(on)in SMD and THD packages

Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R210CFD7XKSA1

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