Infineon CoolMOS 7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R210CFD7XKSA1

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포장 옵션
RS 제품 번호:
217-2561
제조사 부품 번호:
IPP60R210CFD7XKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS 7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

64W

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

900mV

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.36mm

Height

29.95mm

Width

4.57mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.

Ultra-fast body diode

Low gate charge

Best-in-class reverse recovery charge(Qrr)

Improved MOSFET reverse diode dv/dt and diF/dtruggedness

Lowest FOMRDS(on)*Qg and RDS(on)*Eoss

Best-in-class RDS(on)in SMD and THD packages

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