Infineon CoolMOS Type N-Channel MOSFET, 9.9 A, 600 V P, 3-Pin TO-220
- RS 제품 번호:
- 217-2496
- 제조사 부품 번호:
- IPAN60R650CEXKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩74,824.00
재고있음
- 950 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩1,496.48 | ₩74,842.80 |
| 100 - 150 | ₩1,451.36 | ₩72,605.60 |
| 200 + | ₩1,408.12 | ₩70,424.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 217-2496
- 제조사 부품 번호:
- IPAN60R650CEXKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 82W | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.87mm | |
| Standards/Approvals | No | |
| Length | 16.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 82W | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 29.87mm | ||
Standards/Approvals No | ||
Length 16.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
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