제조사부품번호

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1

RS 제품 번호:: 215-2522
제조사 부품 번호:: IPL60R185CFD7AUMA1
제조업체:: Infineon

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩23,124.00

재고있음

3,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 745	₩4,624.80	₩23,124.00
750 - 1495	₩4,508.24	₩22,541.20
1500 +	₩4,440.56	₩22,202.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2522
제조사 부품 번호:: IPL60R185CFD7AUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	ThinPAK
	Series	600V CoolMOS CFD7
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	85W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Height	8.1mm
	Standards/Approvals	No
	Width	1.1 mm
	Length	8.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type ThinPAK
	Series 600V CoolMOS CFD7
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 85W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Height 8.1mm
	Standards/Approvals No
	Width 1.1 mm
	Length 8.1mm
	Automotive Standard No

Datasheet - IPL60R185CFD7AUMA1

The Infineon 600V Cool MOS™ CFD7 is latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1

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