Infineon N Channel Mosfet OptiMOS 2 N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1

RS 제품 번호:: 215-2467
제조사 부품 번호:: BSG0811NDATMA1
제조업체:: Infineon

Infineon N Channel Mosfet OptiMOS 2 N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1

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Subtotal (1 pack of 10 units)*

₩31,520.00

3,370 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 1240	₩3,152.00	₩31,520.00
1250 - 2490	₩3,072.00	₩30,720.00
2500 +	₩3,026.00	₩30,260.00

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RS 제품 번호:: 215-2467
제조사 부품 번호:: BSG0811NDATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	25V
	Series	OptiMOS
	Package Type	Power Block 5x6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8.4nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	4.5V
	Forward Voltage Vf	840mV
	Maximum Power Dissipation Pd	6.25W
	Maximum Operating Temperature	150°C
	Transistor Configuration	N Channel Mosfet
	Width	6.1mm
	Standards/Approvals	JEDEC, RoHS, IEC61249-2-21
	Height	1.1mm
	Length	5.1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 25V
	Series OptiMOS
	Package Type Power Block 5x6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8.4nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 4.5V
	Forward Voltage Vf 840mV
	Maximum Power Dissipation Pd 6.25W
	Maximum Operating Temperature 150°C
	Transistor Configuration N Channel Mosfet
	Width 6.1mm
	Standards/Approvals JEDEC, RoHS, IEC61249-2-21
	Height 1.1mm
	Length 5.1mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - BSG0811NDATMA1

Infineon OptiMOS Series MOSFET, 25V Drain Source Voltage, 50A Maximum Continuous Drain Current - BSG0811NDATMA1

This MOSFET is a surface-mount N-channel transistor designed for high-current switching in compact power designs. It operates with an enhancement-mode N-channel topology and incorporates two elements on a single chip to serve dual-switch functions. The device is suitable for applications requiring a logic-level gate and low on-resistance within a low-voltage environment, and is supplied in a Power Block 5x6 package for dense board layouts.

Features and Benefits:

• Very low Rds(on) of 3mΩ enabling reduced conduction losses
• Maximum continuous drain current 50A for high-current demands
• Logic-level gate with Vgs limit of 4.5V for direct-drive compatibility
• Typical gate charge Qg 8.4nC supporting fast gate transitions
• Power dissipation rating 6.25W for effective thermal handling
• Operational range -55°C to 150°C for wide temperature tolerance

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for server VRM and high-current DC-DC modules
• Used with battery-management circuits in low-voltage systems
• Can be used for motor-driver stages in compact controllers
• Suitable for high-efficiency power distribution and load switching

What thermal limits should be considered during PCB design?

The device can operate up to150°C junction temperature and dissipates up to6.25W

thermal vias and adequate copper area are recommended to manage heat.

How does the dual-element construction affect layout choices?

Two elements per chip provide parallel current paths, reducing individual die stress and allowing tighter placement for symmetrical thermal distribution.

What gate-drive characteristics are required for efficient switching?

A gate drive compatible with a maximum gate-source rating of 4.5V and low charge requirement of 8.4nC reduces gate-driver losses and switching energy.

Are there material or regulatory standards relevant to selection?

The component conforms to JEDEC and RoHS and is manufactured on IEC61249-2-21 substrate, indicating standardised material and lead-free requirements.