Infineon StrongIRFET Type N-Channel MOSFET, 360 A, 40 V Enhancement, 7-Pin TO-263 IRF40SC240ARMA1
- RS 제품 번호:
- 214-9123
- 제조사 부품 번호:
- IRF40SC240ARMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩28,049.60
재고있음
- 추가로 2025년 12월 29일 부터 2,990 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 195 | ₩5,609.92 | ₩28,049.60 |
| 200 - 395 | ₩5,470.80 | ₩27,354.00 |
| 400 + | ₩5,384.32 | ₩26,921.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-9123
- 제조사 부품 번호:
- IRF40SC240ARMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | StrongIRFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 366nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 417W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.2mm | |
| Width | 9.45 mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series StrongIRFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 366nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 417W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.2mm | ||
Width 9.45 mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon’s latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments.
It has 175°C operating temperature
High current carrying capability
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