Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

₩1,137,024.00

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Units
Per unit
Per Reel*
800 - 3200₩1,421.28₩1,136,723.20
4000 +₩1,393.08₩1,114,012.80

*price indicative

RS Stock No.:
214-4467
Mfr. Part No.:
IRL1404ZSTRLPBF
Brand:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

It is lead-free

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