Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263
- RS Stock No.:
- 214-4443
- Mfr. Part No.:
- IRF2807STRLPBF
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 800 units)*
₩946,016.00
재고있음
- 추가로 2026년 2월 09일 부터 2,400 개 단위 배송
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | ₩1,182.52 | ₩945,715.20 |
| 1600 - 2400 | ₩1,158.08 | ₩926,764.80 |
| 3200 + | ₩1,135.52 | ₩908,265.60 |
*price indicative
- RS Stock No.:
- 214-4443
- Mfr. Part No.:
- IRF2807STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device
It is fully avalanche rated
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