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STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247

RS 제품 번호:: 212-2094P
제조사 부품 번호:: SCTWA40N120G2V-4
제조업체:: STMicroelectronics

STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247

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Subtotal 8 units (supplied in a tube)*

₩312,800.00

마지막 RS 재고

최종적인 14 개 unit(s)이 배송 준비 됨

수량	한팩당
8 - 14	₩39,100.00
15 +	₩38,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 212-2094P
제조사 부품 번호:: SCTWA40N120G2V-4
제조업체:: STMicroelectronics

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	Hip-247
	Series	SCTWA40N120G2V-4
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	70mΩ
	Forward Voltage Vf	3.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	61nC
	Maximum Gate Source Voltage Vgs	22V
	Maximum Power Dissipation Pd	277W
	Maximum Operating Temperature	200°C
	Standards/Approvals	No
	Length	15.9mm
	Height	5.1mm
	Width	21.1mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 1200V
	Package Type Hip-247
	Series SCTWA40N120G2V-4
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 70mΩ
	Forward Voltage Vf 3.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 61nC
	Maximum Gate Source Voltage Vgs 22V
	Maximum Power Dissipation Pd 277W
	Maximum Operating Temperature 200°C
	Standards/Approvals No
	Length 15.9mm
	Height 5.1mm
	Width 21.1mm
	Automotive Standard No

DataSheet - SCTWA40N120G2V-4

SiC MOSFET

The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses

Low power losses at high temperatures

Higher operating temperature (up to 200 ˚C)

Body diode with no recovery losses

Easy to drive

STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247

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SiC MOSFET

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