STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247
- RS 제품 번호:
- 212-2094P
- 제조사 부품 번호:
- SCTWA40N120G2V-4
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal 8 units (supplied in a tube)*
₩222,291.20
마지막 RS 재고
- 최종적인 14 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 8 - 14 | ₩27,786.40 |
| 15 + | ₩27,335.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 212-2094P
- 제조사 부품 번호:
- SCTWA40N120G2V-4
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA40N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 277W | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA40N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 277W | ||
Maximum Operating Temperature 200°C | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive