STMicroelectronics SCT1000N170 N-Channel MOSFET, 7 A, 1.7 kV Enhancement, 3-Pin Hip-247 SCT1000N170
- RS 제품 번호:
- 212-2091
- 제조사 부품 번호:
- SCT1000N170
- 제조업체:
- STMicroelectronics
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대량 구매 할인 받기
150개 더 담고 ₩122,400.00 할인 받기
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩816,600.00
일시적 품절
- 2027년 7월 19일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* | 절감 |
|---|---|---|---|
| 30 - 120 | ₩27,220.00 | ₩816,600.00 | - |
| 150 + | ₩26,404.00 | ₩792,102.00 | ₩122,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 212-2091
- 제조사 부품 번호:
- SCT1000N170
- 제조업체:
- STMicroelectronics
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | Hip-247 | |
| Series | SCT1000N170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Width | 20.15mm | |
| Standards/Approvals | No | |
| Height | 5.15mm | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type Hip-247 | ||
Series SCT1000N170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Width 20.15mm | ||
Standards/Approvals No | ||
Height 5.15mm | ||
Length 15.75mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
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