제조사부품번호

STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 212-2091
제조사 부품 번호:: SCT1000N170
제조업체:: STMicroelectronics

STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩637,150.80

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	Per Tube*
30 - 120	₩21,238.36	₩637,133.88
150 +	₩20,601.04	₩618,031.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 212-2091
제조사 부품 번호:: SCT1000N170
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	1700V
	Package Type	Hip-247
	Series	SCT1000N170
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.66Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	96W
	Forward Voltage Vf	4.5V
	Maximum Gate Source Voltage Vgs	22 V
	Typical Gate Charge Qg @ Vgs	13.3nC
	Maximum Operating Temperature	200°C
	Length	15.75mm
	Height	5.15mm
	Width	20.15 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 1700V
	Package Type Hip-247
	Series SCT1000N170
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.66Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 96W
	Forward Voltage Vf 4.5V
	Maximum Gate Source Voltage Vgs 22 V
	Typical Gate Charge Qg @ Vgs 13.3nC
	Maximum Operating Temperature 200°C
	Length 15.75mm
	Height 5.15mm
	Width 20.15 mm
	Standards/Approvals No
	Automotive Standard No

DataSheet - SCT1000N170

SiC MOSFET

The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

High speed switching performance

Very fast and robust intrinsic body diode

Low capacitances

STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

SiC MOSFET

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