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STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 212-2091
제조사 부품 번호:: SCT1000N170
제조업체:: STMicroelectronics

STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩563,323.20

일시적 품절

2026년 8월 31일 부터 배송

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수량	한팩당	Per Tube*
30 - 120	₩18,777.44	₩563,306.28
150 +	₩18,401.44	₩552,043.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 212-2091
제조사 부품 번호:: SCT1000N170
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	1700V
	Series	SCT1000N170
	Package Type	Hip-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.66Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	96W
	Typical Gate Charge Qg @ Vgs	13.3nC
	Maximum Gate Source Voltage Vgs	22 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	4.5V
	Maximum Operating Temperature	200°C
	Height	5.15mm
	Width	20.15 mm
	Standards/Approvals	No
	Length	15.75mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 1700V
	Series SCT1000N170
	Package Type Hip-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.66Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 96W
	Typical Gate Charge Qg @ Vgs 13.3nC
	Maximum Gate Source Voltage Vgs 22 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 4.5V
	Maximum Operating Temperature 200°C
	Height 5.15mm
	Width 20.15 mm
	Standards/Approvals No
	Length 15.75mm
	Automotive Standard No

DataSheet - SCT1000N170

SiC MOSFET

The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

High speed switching performance

Very fast and robust intrinsic body diode

Low capacitances

STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247

SiC MOSFET

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