onsemi NTMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK NTMYS021N06CLTWG
- RS 제품 번호:
- 195-2535
- 제조사 부품 번호:
- NTMYS021N06CLTWG
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 30 units)*
₩45,402.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 30 - 720 | ₩1,513.40 | ₩45,385.08 |
| 750 - 1470 | ₩1,475.80 | ₩44,257.08 |
| 1500 + | ₩1,451.36 | ₩43,557.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2535
- 제조사 부품 번호:
- NTMYS021N06CLTWG
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NTMYS021N06CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 31.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.25 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NTMYS021N06CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 31.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.25 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
관련된 링크들
- onsemi NTMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK NVMYS021N06CLTWG
- onsemi NTMYS025N06CL Type N-Channel MOSFET, 21 A, 60 V Enhancement, 4-Pin LFPAK NTMYS025N06CLTWG
- onsemi NTMYS014N06CL Type N-Channel MOSFET, 36 A, 60 V Enhancement, 4-Pin LFPAK NTMYS014N06CLTWG
- onsemi NVMYS021N06CL Type N-Channel MOSFET, 27 A, 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS025N06CL Type N-Channel MOSFET, 21 A, 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS014N06CL Type N-Channel MOSFET, 36 A, 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS010N04CL Type N-Channel MOSFET, 38 A, 40 V Enhancement, 4-Pin LFPAK NTMYS010N04CLTWG