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onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

RS 제품 번호:: 184-4217
제조사 부품 번호:: FDMA2002NZ
제조업체:: onsemi

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

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Subtotal (1 reel of 3000 units)*

₩1,536,000.00

일시적 품절

2027년 5월 24일 부터 배송

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수량	한팩당	릴당*
3000 - 3000	₩512.00	₩1,534,200.00
6000 - 9000	₩502.00	₩1,503,600.00
12000 +	₩492.00	₩1,473,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 184-4217
제조사 부품 번호:: FDMA2002NZ
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	WDFN
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	268mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.4nC
	Maximum Power Dissipation Pd	1.5W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Height	0.75mm
	Length	2mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type WDFN
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 268mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.4nC
	Maximum Power Dissipation Pd 1.5W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Height 0.75mm
	Length 2mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet FDMA2002NZ

COO (Country of Origin):: TH

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

2.9 A, 30 V

RDS(ON) = 123 mΩ @ VGS = 4.5 V

RDS(ON) = 140 mΩ @ VGS = 3.0 V

RDS(ON) = 163 mΩ @ VGS = 2.5 V

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level=1.8kV (Note 3)

Free from halogenated compounds and antimony oxides

Applications

This product is general usage and suitable for many different applications

onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN

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