Toshiba N-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin USM SSM3K7002CFU,LF(T
- RS 제품 번호:
- 182-5548
- 제조사 부품 번호:
- SSM3K7002CFU,LF(T
- 제조업체:
- Toshiba
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 150 units)*
₩20,400.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 150 - 600 | ₩136.00 | ₩20,520.00 |
| 750 - 1350 | ₩134.00 | ₩20,010.00 |
| 1500 + | ₩130.00 | ₩19,530.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 182-5548
- 제조사 부품 번호:
- SSM3K7002CFU,LF(T
- 제조업체:
- Toshiba
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | USM | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 0.27nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 1.25mm | |
| Height | 850μm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type USM | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 0.27nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 1.25mm | ||
Height 850μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
Gate-Source diode for protection
Low drain-source on-resistance
RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA)
RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA)
RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)
Applications
High-Speed Switching
관련된 링크들
- Toshiba N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin USM SSM3K7002FU(F)
- Toshiba N-Channel MOSFET, 100 mA, 50 V Enhancement, 3-Pin USM SSM3K17FU(F)
- Toshiba N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
- Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SOT-363 SSM6N7002KFU
- Toshiba N-Channel MOSFET, 100 mA, 30 V Enhancement, 3-Pin SC-70 SSM3K15AFU,LF(T
- Toshiba N-Channel MOSFET, 100 mA, 30 V Enhancement, 3-Pin SC-75 SSM3K15AFS,LF(T
- Toshiba Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SOT-23 SSM3J334R,LF(T
- Toshiba SSM3 N-Channel MOSFET, 100 mA, 20 V Enhancement, 3-Pin SSM SSM3K16FS(TE85L,F)
