제조사부품번호

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

RS 제품 번호:: 178-4657
제조사 부품 번호:: FCMT250N65S3
제조업체:: onsemi

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩34,347.60

마지막 RS 재고

최종적인 4,230 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 740	₩3,434.76	₩34,347.60
750 - 1490	₩3,348.28	₩33,482.80
1500 +	₩3,297.52	₩32,975.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4657
제조사 부품 번호:: FCMT250N65S3
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	650V
	Series	FCMT
	Package Type	Power88
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	90W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.05mm
	Width	8 mm
	Standards/Approvals	No
	Length	8mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 650V
	Series FCMT
	Package Type Power88
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 90W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.05mm
	Width 8 mm
	Standards/Approvals No
	Length 8mm
	Automotive Standard No

COO (Country of Origin):: PH

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 oC

Leadless Ultra-thin SMD package

Kelvin contact

Ultra Low Gate Charge (Typ. Qg = 24 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)

Optimized Capacitance

Typ. RDS(on) = 210 mΩ

Moisture Sensitivity Level 1 guarantee

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

High power density

Low gate noise and switching loss

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Telecommunication

Industrial

End Products:

Telecom / Server

Adapter

LED Lighting

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

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