N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3
- RS 제품 번호:
- 178-3934
- 제조사 부품 번호:
- SiDR392DP-T1-GE3
- 제조업체:
- Vishay Siliconix
3000 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(5개가 1팩안에)
₩3,163.467
| 수량 | 한팩당 | 한팩당* |
| 5 - 745 | ₩3,163.467 | ₩15,820.783 |
| 750 - 1495 | ₩3,085.846 | ₩15,425.781 |
| 1500 + | ₩3,037.549 | ₩15,187.745 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 178-3934
- 제조사 부품 번호:
- SiDR392DP-T1-GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
- COO (Country of Origin):
- TW
제품 세부 사항
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO-8DC |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 900 μΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +20 V, +6 V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5.99mm |
| Width | 5mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.07mm |
| Forward Diode Voltage | 1.1V |