Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3
- RS 제품 번호:
- 178-3932
- 제조사 부품 번호:
- SiZ348DT-T1-GE3
- 제조업체:
- Vishay Siliconix
3880 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(10개가 1팩안에)
₩1,047.014
| 수량 | 한팩당 | 한팩당* |
| 10 - 740 | ₩1,047.014 | ₩10,471.868 |
| 750 - 1490 | ₩1,021.141 | ₩10,211.408 |
| 1500 + | ₩1,005.617 | ₩10,054.442 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 178-3932
- 제조사 부품 번호:
- SiZ348DT-T1-GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
- COO (Country of Origin):
- TW
제품 세부 사항
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAIR 3 x 3 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 10 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 16.7 W |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 12.1 nC @ 10 V |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Width | 3mm |
| Height | 0.75mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |