P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ431AEP-T1_GE3
- RS 제품 번호:
- 178-3873P
- 제조사 부품 번호:
- SQJ431AEP-T1_GE3
- 제조업체:
- Vishay Siliconix
8990 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당(릴로 공급됨) 150pcs 이하는 STRIP 포장
₩1,692.127
| 수량 | 한팩당 |
| 750 - 1490 | ₩1,692.127 |
| 1500 + | ₩1,666.253 |
- RS 제품 번호:
- 178-3873P
- 제조사 부품 번호:
- SQJ431AEP-T1_GE3
- 제조업체:
- Vishay Siliconix
참조 문서
제정법과 컴플라이언스
해당 안됨
- COO (Country of Origin):
- CN
제품 세부 사항
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 9.4 A |
| Maximum Drain Source Voltage | 200 V |
| Series | TrenchFET |
| Package Type | PowerPAK SO-8L |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 760 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 68 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 5mm |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Length | 5.99mm |
| Forward Diode Voltage | 1.2V |
| Automotive Standard | AEC-Q101 |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |