Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- RS 제품 번호:
- 178-3702
- 제조사 부품 번호:
- SiZ348DT-T1-GE3
- 제조업체:
- Vishay Siliconix
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩2,492,880.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩830.96 | ₩2,494,008.00 |
| 6000 - 9000 | ₩814.04 | ₩2,443,812.00 |
| 12000 + | ₩799.00 | ₩2,395,308.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-3702
- 제조사 부품 번호:
- SiZ348DT-T1-GE3
- 제조업체:
- Vishay Siliconix
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 16.7W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Width | 3 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay Siliconix | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 16.7W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Width 3 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
제외
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
관련된 링크들
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 31.8 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 32.5 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 38 A, 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 69.3 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 32.5 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 31.8 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3