제조사부품번호

Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK BUK9Y19-55B,115

RS 제품 번호:: 170-5335
제조사 부품 번호:: BUK9Y19-55B,115
제조업체:: Nexperia

Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK BUK9Y19-55B,115

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩27,730.00

재고있음

50 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
25 - 350	₩1,109.20	₩27,748.80
375 - 725	₩1,082.88	₩27,053.20
750 +	₩1,065.96	₩26,639.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 170-5335
제조사 부품 번호:: BUK9Y19-55B,115
제조업체:: Nexperia

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	184A
	Maximum Drain Source Voltage Vds	55V
	Series	BUK9Y19
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	15 V
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	85W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.1 mm
	Length	5mm
	Height	1.05mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 184A
	Maximum Drain Source Voltage Vds 55V
	Series BUK9Y19
	Package Type LFPAK
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 15 V
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 85W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.1 mm
	Length 5mm
	Height 1.05mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: PH

From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.

low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids

Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK BUK9Y19-55B,115

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