onsemi NDS0605 Type P-Channel MOSFET, 120 mA, 60 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 169-8538
- 제조사 부품 번호:
- NDS0610
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩423,000.00
재고있음
- 추가로 2025년 12월 29일 부터 30,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩141.00 | ₩421,872.00 |
| 15000 + | ₩137.24 | ₩413,412.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 169-8538
- 제조사 부품 번호:
- NDS0610
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | NDS0605 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series NDS0605 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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