onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 166-3193
- 제조사 부품 번호:
- RFD12N06RLESM9A
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 166-3193
- 제조사 부품 번호:
- RFD12N06RLESM9A
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | UltraFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 49W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series UltraFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 49W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A
- onsemi RFD16N06LESM Type N-Channel MOSFET, 16 A, 60 V Enhancement, 3-Pin TO-252
- onsemi RFD16N06LESM Type N-Channel MOSFET, 16 A, 60 V Enhancement, 3-Pin TO-252 RFD16N06LESM9A
- onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252
- onsemi Type N-Channel MOSFET, 14 A, 50 V Enhancement, 3-Pin TO-252
- onsemi RFD3055LESM Type N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 RFD3055LESM9A
- onsemi Type N-Channel MOSFET, 14 A, 50 V Enhancement, 3-Pin TO-252 RFD14N05LSM
- onsemi MegaFET Type N-Channel MOSFET, 16 A, 50 V Enhancement, 3-Pin TO-252