Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 165-8030
- Mfr. Part No.:
- IRFR4620TRLPBF
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
₩4,280,760.00
현재 액세스할 수 없는 재고 정보
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | ₩1,426.92 | ₩4,281,888.00 |
| 15000 + | ₩1,398.72 | ₩4,196,160.00 |
*price indicative
- RS Stock No.:
- 165-8030
- Mfr. Part No.:
- IRFR4620TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 78mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 144W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 7.49 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 78mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 144W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 7.49 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V Enhancement, 3-Pin TO-252 IRFR4620TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252
- Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252 IRFR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 42 A, 40 V Enhancement, 3-Pin TO-252
- Infineon IRFR5305PBF Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252 IRFR5305TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252 IRFR3910TRLPBF
