Vishay SQ Type P-Channel Power MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 146-4445
- 제조사 부품 번호:
- SQ2361ES-T1_GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,133,640.00
마지막 RS 재고
- 최종적인 30,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩377.88 | ₩1,131,384.00 |
| 15000 + | ₩370.36 | ₩1,108,824.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 146-4445
- 제조사 부품 번호:
- SQ2361ES-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.177Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.177Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
TrenchFET® power MOSFET
Material categorization
관련된 링크들
- Vishay SQ Type P-Channel Power MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361ES-T1_GE3
- Vishay SQ2361CEES Type P-Channel Single MOSFETs, -2.8 A, 60 V Enhancement, 3-Pin SOT-23
- Vishay SQ2361CES Type P-Channel Single MOSFETs, -2.8 A, 60 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET, 3 A, 12 V Enhancement, 3-Pin SOT-23
- Vishay SQ2361CES Type P-Channel Single MOSFETs, -2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361CES-T1_GE3
- Vishay SQ2361CEES Type P-Channel Single MOSFETs, -2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361CEES-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET, 3 A, 12 V Enhancement, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET, 2.2 A, 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3
