FQP3N30 N-Channel MOSFET, 3.2 A, 300 V QFET, 3-Pin TO-220 ON Semiconductor

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QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Channel Type N
Maximum Continuous Drain Current 3.2 A
Maximum Drain Source Voltage 300 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2.2 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 55 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Width 4.7mm
Length 10.67mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 5.5 nC @ 10 V
Height 16.3mm
Maximum Operating Temperature +150 °C
Series QFET
500 <재고있음> 5-9영업일내 홍콩 발송
단가 Each (In a Tube of 50)
(exc. VAT)
Per Tube*
50 +
*다른 단위에 대한 가격 표시