Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SuperSO BSC009NE2LS5ATMA1
- RS 제품 번호:
- 133-9834
- 제조사 부품 번호:
- BSC009NE2LS5ATMA1
- 제조업체:
- Infineon
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Subtotal (1 pack of 5 units)*
₩16,374.80
재고있음
- 추가로 2026년 1월 05일 부터 11,140 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 + | ₩3,274.96 | ₩16,374.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 133-9834
- 제조사 부품 번호:
- BSC009NE2LS5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SuperSO | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SuperSO | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Width 6.35 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 5 Series MOSFET, 223A Maximum Continuous Drain Current, 74W Maximum Power Dissipation - BSC009NE2LS5ATMA1
This high-performance MOSFET is designed for power management applications, providing exceptional efficiency and reliability. Its optimised characteristics make it suitable for various automation, electronics, and electrical applications. The N-channel configuration and Advanced design facilitate effective management of high current loads while maintaining low on-resistance, making it a preferred choice for modern circuitry.
Features & Benefits
• Supports high current applications with a maximum continuous drain current of 223A
• Very low on-resistance enhances energy efficiency during operation
• Capable of withstanding a maximum drain-source voltage of 25V
• Features a Compact SuperSO8 package for efficient surface mounting
• Delivers effective thermal performance for heat dissipation
• 100% avalanche tested to ensure robust reliability
Applications
• Used in high-performance buck converters for efficient voltage regulation
• Suitable for power management in consumer electronics
• Implemented in automotive where Compact design is Crucial
• Utilised in renewable energy systems for effective power conversion
What is the optimal operating temperature range for installation?
The device operates effectively between -55°C and +150°C, allowing for versatility in various environmental conditions.
Can it be used for synchronous rectification applications?
Yes, the low RDS(on) ensures minimal conduction losses, making it suitable for synchronous rectification.
What handling precautions should be taken during installation?
Standard electrostatic discharge (ESD) precautions should be observed to prevent damage to the MOSFET.
How does the gate charge impact performance?
A typical gate charge of 43nC at 10V helps maintain quick switching speeds, enhancing overall efficiency.
Is this component RoHS compliant?
Yes, it features Pb-free lead plating and is RoHS compliant, aligning with modern environmental standards.
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