Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V Enhancement, 3-Pin TO-252 IRFR7546TRPBF

RS 제품 번호:: 130-0990
제조사 부품 번호:: IRFR7546TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V Enhancement, 3-Pin TO-252 IRFR7546TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩12,708.80

재고있음

추가로 2025년 12월 29일 부터 10,500 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 490	₩1,270.88	₩12,708.80
500 - 990	₩1,240.80	₩12,408.00
1000 +	₩1,220.12	₩12,201.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 130-0990
제조사 부품 번호:: IRFR7546TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	71A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	99W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	6.22mm
	Standards/Approvals	No
	Width	2.39 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 71A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 99W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 6.22mm
	Standards/Approvals No
	Width 2.39 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 71A Maximum Continuous Drain Current, 99W Maximum Power Dissipation - IRFR7546TRPBF

This high-performance MOSFET is engineered for various applications that require efficient power management. With robust specifications, it is well-suited for scenarios demanding durability and highcurrent capabilities. It is commonly used in automation and electrical applications, showcasing exceptional performance characteristics across different environments.

Features & Benefits

• Maximum continuous drain current of 71A

• Rated for a maximum drain-source voltage of 60V

• Low on-resistance enhances efficiency in power delivery

• DPAK package designed for ease of surface mounting

• High power dissipation capability improves thermal management

• Enhancement mode operation optimises switching performance

Applications

• Suitable for brushed motor drive

• Useful in battery-powered circuit designs

• Employed in half-bridge and full-bridge topologies

• Effective in synchronous rectifier

• Applied in DC/DC and AC/DC power conversion systems

What is the thermal specification for continuous operation?

It supports a maximum power dissipation of 99W, ensuring efficient operation without overheating under suitable conditions.

How does it perform in high-temperature environments?

The device operates efficiently up to a maximum junction temperature of +175°C, making it applicable in challenging situations.

What mounting options are available for installation?

It features a surface mount design in a DPAK package, allowing for straightforward integration onto PCBs while saving space.

Is there a limitation on the gate voltage?

Yes, the gate-to-source voltage must not exceed ±20V to ensure safe operating conditions.

What measures enhance its reliability during operation?

Ruggedness is improved through avalanche and dynamic dV/dt protection features, ensuring dependable performance in various conditions.