Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220 IRLB3034PBF
- RS 제품 번호:
- 124-9024
- 제조사 부품 번호:
- IRLB3034PBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩180,574.00
재고있음
- 100 개 단위 배송 준비 완료
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수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩3,611.48 | ₩180,574.00 |
| 100 - 150 | ₩3,532.52 | ₩176,663.60 |
| 200 + | ₩3,427.24 | ₩171,362.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 124-9024
- 제조사 부품 번호:
- IRLB3034PBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 343A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 343A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF
This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.
Features & Benefits
• Capable of handling a maximum continuous drain current of 343A
• Optimised for logic level drive for simplified control
• Designed for high-speed power switching requirements
• Wide operating temperature range from -55°C to +175°C
• Superior gate threshold of 1V to 2.5V benefits low voltage operations
Applications
• Ideal for DC motor drive systems
• Utilised in high efficiency synchronous rectification setups
• Suitable for uninterruptible power supplies
• Effective in hard switched and high-frequency circuits
What are the maximum power dissipation capabilities of this component?
The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.
How does the low RDS(on) contribute to performance?
The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.
Can this MOSFET be used in automation systems?
Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.
What mounting options does this component offer?
It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.
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