STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 STW56N60DM2
- RS 제품 번호:
- 111-6485
- 제조사 부품 번호:
- STW56N60DM2
- 제조업체:
- STMicroelectronics
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Subtotal (1 unit)*
₩17,025.28
일시적 품절
- 2026년 6월 09일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩17,025.28 |
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| 15 + | ₩16,344.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 111-6485
- 제조사 부품 번호:
- STW56N60DM2
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | MDmesh DM2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -5.5V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 360W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series MDmesh DM2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -5.5V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 360W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Automotive Standard No | ||
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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