Infineon CoolSiC N channel-Channel Power MOSFET, 112 A, 400 V Enhancement, 4-Pin TO-247-4 IMZA40R011M2HXKSA1
- RS 제품 번호:
- 762-967
- 제조사 부품 번호:
- IMZA40R011M2HXKSA1
- 제조업체:
- Infineon
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩30,550.65
재고있음
- 240 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩30,550.65 |
| 10 - 24 | ₩27,502.80 |
| 25 + | ₩22,602.45 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-967
- 제조사 부품 번호:
- IMZA40R011M2HXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | CoolSiC | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 341W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.3V | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series CoolSiC | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 341W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.3V | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectification. It use .XT interconnection technology for best‑in‑class thermal performance and the recommended gate driving voltage 0 V to 18 V.
Commutation robust fast body diode
100% avalanche tested
Qualified for industrial applications
400V operating voltage
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