Infineon CoolSiC N channel-Channel Power MOSFET, 74 A, 650 V Enhancement, 3-Pin TO-247 IMW65R075M2HXKSA1
- RS 제품 번호:
- 762-919
- 제조사 부품 번호:
- IMW65R075M2HXKSA1
- 제조업체:
- Infineon
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩9,276.15
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩9,276.15 |
| 10 - 49 | ₩7,513.35 |
| 50 - 99 | ₩5,748.60 |
| 100 + | ₩4,594.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-919
- 제조사 부품 번호:
- IMW65R075M2HXKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 124W | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Standards/Approvals | RoHS | |
| Length | 21.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 124W | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Standards/Approvals RoHS | ||
Length 21.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
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