Infineon CoolSiC N channel-Channel Power MOSFET, 74 A, 650 V Enhancement, 3-Pin TO-247 IMW65R075M2HXKSA1
- RS 제품 번호:
- 762-919
- 제조사 부품 번호:
- IMW65R075M2HXKSA1
- 제조업체:
- Infineon
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩9,276.15
일시적 품절
- 2027년 4월 23일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩9,276.15 |
| 10 - 49 | ₩7,513.35 |
| 50 - 99 | ₩5,748.60 |
| 100 + | ₩4,594.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-919
- 제조사 부품 번호:
- IMW65R075M2HXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 124W | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.5mm | |
| Standards/Approvals | RoHS | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 124W | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Operating Temperature 175°C | ||
Length 21.5mm | ||
Standards/Approvals RoHS | ||
Height 5.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
관련된 링크들
- Infineon CoolSiC Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IMW65R107M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 39 A, 650 V Enhancement, 3-Pin TO-247 IMW65R048M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 3-Pin TO-247 IMW65R072M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-247 IMW65R083M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 IMW65R057M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 58 A, 650 V Enhancement, 3-Pin TO-247 IMW65R030M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247 IMW65R027M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 IMW65R039M1HXKSA1