Infineon Half Bridge XHP 2 N channel-Channel MOSFET Modules, 1000 A, 2300 V Enhancement, 15-Pin XHP-2
- RS 제품 번호:
- 762-890
- 제조사 부품 번호:
- FF1300UXTR23T2M1PBPSA1
- 제조업체:
- Infineon
N
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Subtotal (1 unit)*
₩7,936,646.25
일시적 품절
- 2026년 10월 05일 부터 배송
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|---|---|
| 1 + | ₩7,936,646.25 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-890
- 제조사 부품 번호:
- FF1300UXTR23T2M1PBPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET Modules | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 1000A | |
| Maximum Drain Source Voltage Vds | 2300V | |
| Series | XHP 2 | |
| Package Type | XHP-2 | |
| Mount Type | Screw | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 1.59mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 6.25V | |
| Typical Gate Charge Qg @ Vgs | 3.98μC | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 140mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET Modules | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 1000A | ||
Maximum Drain Source Voltage Vds 2300V | ||
Series XHP 2 | ||
Package Type XHP-2 | ||
Mount Type Screw | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 1.59mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 6.25V | ||
Typical Gate Charge Qg @ Vgs 3.98μC | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 140mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon CoolSiC MOSFET half bridge module features voltage rating of 2300 V and supports high current density. It features AlSiC base plate for increased thermal cycling capability and high creepage and clearance distances.
Low inductive design
Low switching losses
High power density
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