Vishay SQ4917CEY P-Channel MOSFET, -8 A, 60 V Enhancement, 8-Pin SO-8 SQ4917CEY-T1_BE3
- RS 제품 번호:
- 735-121
- 제조사 부품 번호:
- SQ4917CEY-T1_BE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩2,769.00
일시적 품절
- 2026년 8월 31일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩2,769.00 |
| 10 - 24 | ₩1,809.60 |
| 25 - 99 | ₩937.95 |
| 100 - 499 | ₩916.50 |
| 500 + | ₩893.10 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-121
- 제조사 부품 번호:
- SQ4917CEY-T1_BE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SQ4917CEY | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.048Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Width | 6.2mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SQ4917CEY | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.048Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Width 6.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET offers high performance in automotive applications, delivering robust dual P-channel configurations that handle voltages up to 60 V and temperatures up to 175 °C.
TrenchFET technology ensures low on-state resistance
Offers a maximum continuous drain current of -8 A per leg
관련된 링크들
- Vishay SQ4917CEY 4 Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 SQ4917CEY-T1_GE3
- Vishay SQ4946CEY Dual N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_BE3
- Vishay SQ4850CEY Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SO-8 SQ4850CEY-T1_GE3
- Vishay SQ4401CEY Type P-Channel MOSFET, 17.3 A, 40 V Enhancement, 8-Pin SO-8 SQ4401CEY-T1_GE3
- Vishay SQ4840CEY Type N-Channel MOSFET, 20.7 A, 40 V Enhancement, 8-Pin SO-8 SQ4840CEY-T1_GE3
- Vishay SQ4940CEY Dual N-Channel Single MOSFETs, 8 A, 40 V Enhancement, 8-Pin SO-8 SQ4940CEY-T1_GE3
- Vishay SQ4940CEY Dual N-Channel Single MOSFETs, 8 A, 40 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET N channel-Channel MOSFET, 5.4 A, 60 V Enhancement, 8-Pin SO-8 SQ9945CEY-T1_GE3
