Vishay SIB4122DK Type N-Channel Single MOSFETs, 5.9 A, 100 V Enhancement, 7-Pin PowerPAK
- RS 제품 번호:
- 653-094
- 제조사 부품 번호:
- SIB4122DK-T1-GE3
- 제조업체:
- Vishay
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩526.40
재고있음
- 6,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | ₩526.40 |
| 25 - 99 | ₩462.48 |
| 100 - 499 | ₩421.12 |
| 500 - 999 | ₩357.20 |
| 1000 + | ₩336.52 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 653-094
- 제조사 부품 번호:
- SIB4122DK-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SIB4122DK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.160Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.6 mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Length | 1.6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SIB4122DK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.160Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.6 mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Length 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SC-75, it utilizes ThunderFET Gen IV technology to deliver low RDS(on), fast switching, and excellent thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
관련된 링크들
- Vishay SIB4122DK Type N-Channel Single MOSFETs, 5.9 A, 100 V Enhancement, 7-Pin PowerPAK SIB4122DK-T1-GE3
- Vishay Type N-Channel MOSFET, 1.5 A, 190 V, 6-Pin PowerPAK SIB452DK-T1-GE3
- Vishay SQS146 Type N-Channel Single MOSFETs, 94 A, 40 V Enhancement, 8-Pin PowerPAK
- Vishay SQJQ14 Type N-Channel Single MOSFETs, 345 A, 40 V Enhancement, 3-Pin PowerPAK
- Vishay SQJ443 Type P-Channel Single MOSFETs, 24 A, -40 V Enhancement, 4-Pin PowerPAK
- Vishay SUM50010EL Type N-Channel Single MOSFETs, 150 A, 60 V Enhancement, 3-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK
- Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK
