Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin IPAK IRLU8743PBF
- RS 제품 번호:
- 495-760
- 제조사 부품 번호:
- IRLU8743PBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩10,058.00
제한된 재고
- 추가로 2025년 12월 26일 부터 145 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 15 | ₩2,011.60 | ₩10,058.00 |
| 20 + | ₩1,962.72 | ₩9,813.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 495-760
- 제조사 부품 번호:
- IRLU8743PBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 135W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-29-640 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 135W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-29-640 | ||
Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF
This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises Advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.
Features & Benefits
• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability
Applications
• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply
How does it perform in high-temperature environments?
The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.
What is the significance of low RDS(on) for my design?
A low RDS(on) Value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.
Can it be used in Pulse applications?
Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.
What factors should I consider during installation?
It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.
Is there a need for additional components for gate control?
Incorporating gate drive circuits may be advantageous to enhance switching performance, especially in high-frequency applications.
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