Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1
- RS 제품 번호:
- 351-970
- 제조사 부품 번호:
- IGC033S101XTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩12,761.44
일시적 품절
- 2026년 7월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩6,380.72 | ₩12,759.56 |
| 20 - 198 | ₩5,745.28 | ₩11,490.56 |
| 200 - 998 | ₩5,297.84 | ₩10,595.68 |
| 1000 - 1998 | ₩4,912.44 | ₩9,824.88 |
| 2000 + | ₩4,402.96 | ₩8,805.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 351-970
- 제조사 부품 번호:
- IGC033S101XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IGC033 | |
| Package Type | PG-VSON-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5.5 V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IGC033 | ||
Package Type PG-VSON-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5.5 V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Transistor is a normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Best in class power density
Highest efficiency
Improved thermal management
Enabling smaller and lighter designs
Excellent reliability
Lowering BOM cost
관련된 링크들
- Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1
- Infineon CoolGaN Type P-Channel Single MOSFETs, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101
- Infineon CoolGaN Type P-Channel Single MOSFETs, 76 A, 100 V Enhancement, 6-Pin PG-TSON-6-2 IGC033S10S1
- Infineon 3-Axis PCB Sensor 2.8 V 5.5 V, SPI, PG-VSON-8, 8-Pin
- Infineon TLE4972AE35S5XUMA1, Current Sensor IC 7-Pin, PG-VSON-6
- Infineon 650 V 6 A Rectifier & Schottky Diode 5-Pin PG-VSON-4
- Infineon 650 V 6 A Rectifier & Schottky Diode 5-Pin PG-VSON-4 IDL06G65C5XUMA2
- Infineon IPL Type N-Channel MOSFET, 21 A, 700 V Enhancement, 4-Pin PG-VSON-4
