Infineon OptiMOS-TM6 Type N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1

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Subtotal (1 pack of 5 units)*

₩15,115.20

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한팩당*
5 - 45₩3,023.04₩15,113.32
50 - 95₩2,872.64₩14,363.20
100 - 495₩2,660.20₩13,301.00
500 - 995₩2,447.76₩12,240.68
1000 +₩2,355.64₩11,781.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-164
제조사 부품 번호:
IAUCN04S6N013TATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

230A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-LHDSO-10-1

Series

OptiMOS-TM6

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

1.68mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

133W

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.

MSL1 up to 260°C peak reflow

175°C operating temperature

RoHS compliant

Potential application

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