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Infineon IMT Type N-Channel MOSFET, 43 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R050M2HXTMA1

RS 제품 번호:: 349-058
제조사 부품 번호:: IMTA65R050M2HXTMA1
제조업체:: Infineon

Infineon IMT Type N-Channel MOSFET, 43 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R050M2HXTMA1

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Subtotal (1 unit)*

₩14,404.56

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2027년 11월 17일 부터 배송

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RS 제품 번호:: 349-058
제조사 부품 번호:: IMTA65R050M2HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	650V
	Series	IMT
	Package Type	PG-LHSOF-4
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Power Dissipation Pd	197W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 650V
	Series IMT
	Package Type PG-LHSOF-4
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Power Dissipation Pd 197W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMTA65R050M2HXTMA1

COO (Country of Origin):: MY

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, making it ideal for meeting the ever-growing demands of modern power systems and markets. Its advanced technology provides a powerful solution for achieving high system efficiency in a wide range of applications.

Ultra low switching losses

Robust against parasitic turn‑on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon IMT Type N-Channel MOSFET, 43 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R050M2HXTMA1

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