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Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1

RS 제품 번호:: 349-054
제조사 부품 번호:: IMT65R107M1HXUMA1
제조업체:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩22,251.68

재고있음

2,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 18	₩11,125.84	₩22,251.68
20 - 198	₩10,012.88	₩20,025.76
200 +	₩9,242.08	₩18,484.16

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-054
제조사 부품 번호:: IMT65R107M1HXUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	CoolSiC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	141mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	138W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series CoolSiC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 141mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 138W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMT65R107M1HXUMA1

COO (Country of Origin):: MY

The Infineon CoolSiC MOSFET 650 V G1 is built on over 20 years of solid silicon carbide technology developed by Infineon. By leveraging the unique characteristics of wide bandgap SiC materials, the 650 V CoolSiC MOSFET delivers an exceptional combination of performance, reliability, and ease of use. It is designed for high temperature and harsh operating conditions, making it ideal for demanding applications. This MOSFET enables the simplified and cost-effective deployment of systems with the highest efficiency, addressing the increasing needs of modern power electronics.

Optimized switching behaviour at higher currents

Commutation robust fast body diode with low Qfr

Increased avalanche capability

Compatible with standard drivers

Kelvin source provides up to 4 times lower switching losses

Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1

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