Infineon IPA Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPAN60R180CM8XKSA1

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Subtotal (1 pack of 5 units)*

₩16,111.60

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한팩당*
5 - 45₩3,222.32₩16,111.60
50 - 95₩3,060.64₩15,299.44
100 - 495₩2,835.04₩14,175.20
500 - 995₩2,609.44₩13,050.96
1000 +₩2,515.44₩12,573.44

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
348-987
제조사 부품 번호:
IPAN60R180CM8XKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO220-3

Series

IPA

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

25W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode (CFD) for all products with outstanding robustness against hard commutation and excellent ESD capability.

Significant reduction of switching and conduction losses

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

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