Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- RS 제품 번호:
- 285-057
- 제조사 부품 번호:
- ISC800P06LMATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 285-057
- 제조사 부품 번호:
- ISC800P06LMATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -19.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -19.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.
Very low on resistance improves efficiency
100% avalanche tested for reliability
Pb free lead plating for compliance
Halogen free construction supports eco friendliness
Logic level operation for easy interfacing
Suitable for diverse industrial applications
Excellent thermal characteristics ensure reliability
Enhancement mode design for stable performance
관련된 링크들
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -59 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC240P06LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -32 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC750P10LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -22 A, 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.5 A, 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 86 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 63 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
