제조사부품번호

Infineon OptiMOS Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1

RS 제품 번호:: 284-697
제조사 부품 번호:: BSC009N04LSSCATMA1
제조업체:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1

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Subtotal (1 pack of 5 units)*

₩26,980.00

일시적 품절

2027년 8월 26일 부터 배송

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수량	한팩당	한팩당*
5 - 45	₩5,396.00	₩26,980.00
50 - 95	₩5,128.00	₩25,640.00
100 - 495	₩4,748.00	₩23,740.00
500 - 995	₩4,372.00	₩21,860.00
1000 +	₩4,208.00	₩21,040.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 284-697
제조사 부품 번호:: BSC009N04LSSCATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-WSON-8
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	188W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-WSON-8
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 188W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - BSC009N04LSSCATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC009N04LSSCATMA1

This MOSFET is a high-current N-channel switch designed for surface-mount power conversion and control applications. It operates across a wide ambient range and is intended for systems that demand substantial current handling and compact mounting using a PG-WSON-8 package.

Features and Benefits:

• 381A continuous drain current enables high-load switching capability
• 40V drain-source rating supports medium-voltage power stages
• 1V forward voltage reduces conduction losses under load
• 188W maximum dissipation permits substantial power handling
• Type N enhancement mode provides standard MOSFET switching behaviour
• 20V gate-source tolerance allows robust gate-drive margins

Applications

• Suitable for high-current DC-DC converter stages
• Ideal for motor-driver half-bridge configurations
• Used with server power-supply switching networks
• Can be used for telecom power distribution modules
• Appropriate for industrial inverter intermediate stages

What temperature extremes can the device endure in operation?

It maintains functionality from -55 °C up to 175 °C, allowing use in harsh thermal environments and elevated-junction designs.

What mounting method does the device require on a PCB?

The component is supplied in a PG-WSON-8 package intended for surface mounting to enable compact board layouts and low-inductance connections.

How does the gate-drive voltage affect switching?

The gate-source voltage range permits up to 20V, giving margin for fast switching with common gate-drive voltages while avoiding overdrive that could stress the gate.

Is the device suitable where environmentally restricted materials are required?

It complies with RoHS directives, meeting restricted-substance requirements for material selection.