Infineon OptiMOS Type N-Channel MOSFET, 77 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC110N15NS5SCATMA1
- RS 제품 번호:
- 284-648
- 제조사 부품 번호:
- BSC110N15NS5SCATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩11,956.80
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩5,978.40 | ₩11,956.80 |
| 20 - 198 | ₩5,386.20 | ₩10,772.40 |
| 200 - 998 | ₩4,953.80 | ₩9,907.60 |
| 1000 - 1998 | ₩4,606.00 | ₩9,212.00 |
| 2000 + | ₩4,126.60 | ₩8,253.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-648
- 제조사 부품 번호:
- BSC110N15NS5SCATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-WSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-WSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET stands as a Pinnacle of performance in the realm of MOSFET technology. Designed for demanding industrial applications, it offers superior efficiency and reliability, making it an Ideal choice for high frequency switching and synchronous rectification. With innovative dual side cooling and an operating temperature capability of up to 175°C, this device ensures robust operation even under significant thermal stress. The infusion of Advanced materials further enhances its thermal stability and reliability, ensuring that it meets the strictest industry standards. With its comprehensive validation to JEDEC standards, this MOSFET is tailored for engineers seeking excellence in power electronics.
Exceptional thermal resistance for reliability
N channel design for versatile switching
Streamlined package for space efficiency
Qualified for industrial applications' performance
Optimised for high frequency technology designs
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