Nexperia PSM Type N-Channel MOSFET, 66 A, 30 V Enhancement, 5-Pin LFPAK PSMN6R1-30YLDX

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tape of 1 unit)*

₩750.12

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보
Tape(s)
Per Tape
1 - 9₩750.12
10 - 99₩665.52
100 - 499₩624.16
500 - 999₩582.80
1000 +₩520.76

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
219-439
제조사 부품 번호:
PSMN6R1-30YLDX
제조업체:
Nexperia
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

8.35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

47W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Qualified to 175 °C

Superfast switching with soft recovery

관련된 링크들