Nexperia PSM Type N-Channel MOSFET, 150 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R8-30MLHX
- RS 제품 번호:
- 219-268
- 제조사 부품 번호:
- PSMN1R8-30MLHX
- 제조업체:
- Nexperia
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩1,874.36
재고있음
- 추가로 2026년 1월 19일 부터 1,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩1,874.36 |
| 10 - 99 | ₩1,686.36 |
| 100 - 499 | ₩1,560.40 |
| 500 - 999 | ₩1,436.32 |
| 1000 + | ₩1,289.68 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 219-268
- 제조사 부품 번호:
- PSMN1R8-30MLHX
- 제조업체:
- Nexperia
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 106W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 106W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET featuring NextPowerS3 technology offers low RDS, low IDSS leakage, and high efficiency, with a current rating of 150 A. Its optimized low gate resistance supports fast-switching applications. Key applications include synchronous buck regulators, synchronous rectifiers in AC to DC and DC to DC conversions, BLDC motor control, eFuse and battery protection, as well as OR-ing and hot-swap functionalities.
Fast switching
Low spiking and ringing for low EMI designs
High reliability copper clip bonded
Qualified to 175 °C
Exposed leads for optimal Visual solder inspection
관련된 링크들
- Nexperia PSM Type N-Channel MOSFET, 150 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R8-30MLHX
- Nexperia PSM Type N-Channel MOSFET, 30 A, 100 V Enhancement, 5-Pin LFPAK PSMN040-100MSEX
- Nexperia PSM Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLDX
- Nexperia PSM Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN3R0-30YLDX
- Nexperia PSM Type N-Channel MOSFET, 66 A, 30 V Enhancement, 5-Pin LFPAK PSMN6R1-30YLDX
- Nexperia PSM Type N-Channel MOSFET, 51 A, 30 V Enhancement, 5-Pin LFPAK PSMN7R5-30YLDX
- Nexperia PSM Type N-Channel MOSFET, 160 A, 30 V Enhancement, 5-Pin LFPAK PSMN2R1-30YLEX
- Nexperia PSM Type N-Channel MOSFET, 275 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLEX